-
Notifications
You must be signed in to change notification settings - Fork 1
/
Copy pathArF Immersion Scanners.txt
286 lines (286 loc) · 8.64 KB
/
ArF Immersion Scanners.txt
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
185
186
187
188
189
190
191
192
193
194
195
196
197
198
199
200
201
202
203
204
205
206
207
208
209
210
211
212
213
214
215
216
217
218
219
220
221
222
223
224
225
226
227
228
229
230
231
232
233
234
235
236
237
238
239
240
241
242
243
244
245
246
247
248
249
250
251
252
253
254
255
256
257
258
259
260
261
262
263
264
265
266
267
268
269
270
271
272
273
274
275
276
277
278
279
280
281
282
283
284
285
286
ArF Immersion Scanners
NSR-S631E
Resolution ≦ 38 nm
NA 1.35
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay SMO*1: ≦ 1.7 nm, MMO*2: ≦ 2.3 nm
Throughput ≧ 250 wafers/hour (96 shots),
≧ 270 wafers/hour (96 shots, optional)
*1Single Machine Overlay: machine-to-self overlay accuracy (NSR-S631E#1 to S631E#1)
*2Mix and Match Overlay: machine-to-machine overlay accuracy (NSR-S631E#1 to S631E#2)
NSR-S630D
Resolution ≦ 38 nm
NA 1.35
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay SMO*1: ≦ 1.7 nm, MMO*2: ≦ 2.5 nm
Throughput ≧ 250 wafers/hour (96 shots)
*1Single Machine Overlay: machine-to-self overlay accuracy (NSR-S630D#1 to S630D#1)
*2Mix and Match Overlay: machine-to-machine overlay accuracy (NSR-S630D#1 to S630D#2)
NSR-S621D
Resolution ≦ 38 nm
NA 1.35
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay ≦ 2 nm
Throughput ≧ 200 wafers/hour (125 shots)
NSR-S620D
Resolution ≦ 38 nm
NA 1.35
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 × 33 mm
Overlay ≦ 3 nm
Throughput ≧ 180 wafers/hour (300 mm wafer, 125 shots)
NSR-S610C
Resolution ≦ 45 nm
NA 1.30
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Overlay ≦ 6.5 nm
Throughput ≧ 130 wafers/hour (300 mm wafer, 76 shots)
NSR-S609B
Resolution ≦ 55 nm
NA 1.07
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 7 nm
Throughput ≧ 130 wafers/hour (300 mm wafer, 76 shots)
ArF Scanners
NSR-S320F
Resolution ≦ 65 nm
NA 0.92
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay ≦ 3 nm
Throughput ≧ 200 wafers/hour (125 shots)
NSR-S310F
Resolution ≦ 65 nm
NA 0.92
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay ≦ 7 nm
Throughput ≧ 174 wafers/hour (76 shots)
NSR-S308F
Resolution ≦ 65 nm
NA 0.92
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 8 nm
NSR-S307E
Resolution ≦ 80 nm
NA 0.85
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 12 nm
NSR-S306C
Resolution ≦ 100 nm
NA 0.78
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 20 nm
NSR-S305B
Resolution ≦ 110 nm
NA 0.68
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 30 nm
KrF Scanners/KrF Steppers
NSR-S210D
Resolution ≦ 110 nm
NA 0.82
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay ≦ 9 nm
Throughput ≧ 176 wafers/hour (76 shots)
NSR-S208D
Resolution ≦ 110 nm
NA 0.82
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 10 nm
Throughput ≧ 147 wafers/hour (300 mm wafer, 76 shots)
NSR-S207D
Resolution ≦ 110 nm
NA 0.82
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 10 nm
NSR-SF200
Resolution ≦ 150 nm
NA 0.63
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 28 nm
Throughput ≧ 110 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer)
NSR-S206D
Resolution ≦ 110 nm
NA 0.82
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy ≦ 20 nm
NSR-S205C
Resolution ≦ 130 nm
NA 0.75
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 30 nm
NSR-S204B
Resolution ≦ 150 nm
NA 0.68
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 35 nm
NSR-S203B
Resolution ≦ 180 nm
NA 0.68
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 40 nm
NSR-S202A
Resolution ≦ 250 nm
NA 0.60
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 45 nm
NSR-2205EX14C
Resolution ≦ 250 nm
NA 0.60
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 50 nm
Alignment system LSA (standard), FIA (standard), LIA (optional)
NSR-2205EX12B
Resolution ≦ 280 nm
NA 0.55
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 55 nm
Alignment system LSA (standard), FIA (standard), LIA (optional)
NSR-S201A
Resolution ≦ 250 nm
NA 0.60
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 50 nm
NSR-2205EX10B
Resolution ≦ 320 nm
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 80 nm
i-line Steppers
NSR-2205i14E2
Resolution ≦ 350 nm
NA 0.63
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Overlay ≦ 40 nm
Throughput ≧ 103 wafers/hour (200 mm wafer)
NSR-SF150
Resolution ≦ 280 nm
NA 0.62
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 25 nm
Throughput ≧ 180 wafers/hour (300 mm wafer, 76 shots)
NSR-SF140
Resolution ≦ 280 nm
NA 0.62
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 35 nm
Throughput ≧ 117 wafers/hour (300 mm wafer, 76 shots)
NSR-SF130
Resolution ≦ 280 nm
NA 0.62
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 35 nm
Throughput ≧ 120 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer)
NSR-SF120
Resolution ≦ 280 nm
NA 0.62
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy ≦ 35 nm
Throughput ≧ 100 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer)
NSR-SF100
Resolution ≦ 400 nm
NA 0.52
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy ≦ 45 nm
Throughput ≧ 80 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer)
NSR-2205i12D
Resolution ≦ 350 nm
NA 0.63
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm (6-inch reticle), 20.0 × 20.4 mm (5-inch reticle)
Alignment accuracy (EGA, |M| + 3σ) ≦ 55 nm
NSR-TFHi12
Resolution ≦ 500 nm
NA 0.30 ~ 0.45 (variable)
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 55 nm
NSR-2205i14E
Resolution ≦ 350 nm
NA 0.63
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 50 nm
Alignment system LSA (standard), FIA (standard), LIA (optional)
NSR-4425i
Resolution ≦ 700 nm
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:2.5
Exposure field 44 mm square
Alignment accuracy (EGA, |M| + 3σ) ≦ 100 nm
NSR-2205i11D
Resolution ≦ 350 nm
NA 0.63
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 70 nm
Alignment system LSA (standard), FIA (optional), LIA (optional)
Metrology/Inspection Systems
Automatic Macro Inspection System AMI-5600/3500/3000 MarkⅡ